| 摘要 |
<p>PURPOSE:To turn a compressional internal stress into an tensile stress, and form a boron nitride thin film applicable to a mask substrate for X-ray exposure, by applying a specific heat-treating to the boron nitride thin film grown on a silicon substrate by plasma chemical vapor growth. CONSTITUTION:A boron nitride film of 0.5-3.0mum thick is grown on a silicon substrate at a substrate temperature of 200-600 deg.C, by using plasma chemical vapor growth. In an inactive gas atmosphere, this film temperature is raised from a room temperature to 800-1000 deg.C at a rate of 5 deg.C/sec-20 deg.C/sec. After the temperature is kept in the range of 800-1000 deg.C for 10sec-2min, it is reduced up to 750 deg.C at a rate of 1 deg.C/sec-5 deg.C/sec. Thereby, a compressional internal stress can be turned into a tensile stress, and a thin film suitable for a mask substrate for X-ray exposure can be formed.</p> |
