| 摘要 |
PURPOSE:To make it possible to obtain an epitaxially grown film of high quality by a method wherein, after light is irradiated on a substrate in a hydrogen radical- containing atmosphere before growth to cleanse the substrate surface at low temperature, a crystal is grown by a vapor growth method. CONSTITUTION:In the case of growing a crystal of a compound semiconductor of the same kind as a compound semiconductor substrate 102 or dissimilar from the substrate 102 on the substrate 102 by a vapor growth method, light is irradiated on the substrate 102 in an atmosphere containing hydrogen radicals produced by the discharge decomposition of hydrogen gas or photodissociation before the growth to cleanse the surface of the substrate 102 and thereafter, the crystal of the compound semiconductor is grown on the substrate 102 by a vapor growth method. For example, after the temperature of the substrate is set at a prescribed temperature before the growth is started, hydrogen radicals produced in a microwave discharge tube 112 are introduced in a growth chamber 101 through a gas introducing part 109 and at the same time, an ArF excimer laser beam of a wavelength of 193 nm is irradiated on the substrate 102 in the chamber 101 from an excimer laser 108 through a reflecting mirror 107 and a light-introducing window 106 to perform a cleaning of the substrate surface.
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