发明名称 ELECTROSTATIC PROTECTIVE CIRCUIT
摘要 PURPOSE:To obtain an electrostatic protective circuit which is excellent in its withstand voltage/current performance and usable also in a roll call circuit, by forming a field-effect transistor with a drain, connected to its input terminal, and a source 15 and a gate 1g, provided with application of a prescribed voltage and next by forming a parasitic lateral bipolar transistor or the like connected in parallel with the field effect transistor. CONSTITUTION:This circuit is composed of the following parts: a field-effect transistor 1 having a drain 1d connected to an input terminal 2 and having a source 1S and a gate 1g provided with application of a prescribed voltage, a parasitic lateral bipolar transistor 5 connected in parallel with the field-effect transistor 1, and a parasitic resistance 4 due to an impurity region where a channel of the said field-effect transistor 1 is formed. Said parasitic lateral bipolar transistor 5 is operated by a potential difference generated across said parasitic resistance 4 upon the application of excessive input voltage opposite in polarity to said prescribed voltage. Hence the operation of the parasitic lateral bipolar transistor 5 enables the effective protection of an internal circuit against the excessive input voltage irrespective of current pulses and voltage pulses.
申请公布号 JPS63289962(A) 申请公布日期 1988.11.28
申请号 JP19870125567 申请日期 1987.05.22
申请人 SONY CORP 发明人 YAMADA TAKAAKI;WATANABE KAZUO
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/02;H01L27/088;H01L29/78;H03K17/08 主分类号 H01L27/04
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