| 摘要 |
PURPOSE:To increase the number of times of crystal growth, which is limited by the clogging of reaction products in a filter or a throttle valve for pressure control, and to increase the working ratio of the title device by a method wherein the maximum hole diameter of the filtering medium of the filter provided between a reaction container and the throttle valve for pressure control is specified within a specified range. CONSTITUTION:A filter 24 is provided between a reaction container 21 and a throttle valve 25 for pressure control provided on the side of a flow lower than the container 21 and the maximum hole diameter of the filtering medium of the filter 24 is specified within a range of 10mum-60mum. For example, a vacuum vapor growth device consisting of GaAs and GaAlAs is constituted of flow rate controlling units 11-15 for each raw gas, a TMC evaporation container 16, a TMA evaporation container 17, an arsine bomb 18, pressure gages 19 and 23, a throttle valve 20 for pressure control, the throttle valve 25 for pressure control, the container 21, the filter 24, a vacuum pump 26, three- way valves 27-29 and so on and by specifying the maximum hole diameter of the filtering medium of the filter 24 within the above range, a proper balance is so contrived as to be kept between the amount of reaction products, which are trapped by the filter, and the amount of reaction products, which pass through the filter to the flow lower than the filter.
|
