| 摘要 |
PURPOSE:To upgrade outer differential quantum efficiency and to enable the exact monitoring of laser beam power without using a photodiode for laser beam power detection and besides without having effects of temperature variations, by sticking a photoconductive film on a reflective film with a higher reflection factor on a resonance plane and providing a photoconductive electrode so that it is conductively connected with the photoconductive electrode. CONSTITUTION:A semiconductor laser device is manufactured by forming reflective films 32, 33 respectively on a pair of facing resonance surfaces of cleavage planes so that the films 32, 33 are formed different from each other in their reflection factors. A photoconductive film 40 is stuck on the reflective film 33 with a higher reflection factor, and a photoconductive electrode 41 is provided so that it is conductively connected with the photoconductive film 40. For example, the reflective film 32 on one side is a dielectric film made of Al2O3, and the reflective film 33 on the other side is composed in multilayer structure comprising a plurality of dielectric films 34 to 36 made of Al2O3 and a plurality of amorphous Si films 37, 38, and a reflection factor of the reflective film 33 is made higher than that of the reflective film 32. The hydrogen-doped amorphous Si film 40 as the photoconductive film is stuck on the reflective film 33, and further a photoconductive electrode 41 is conductively connected with the photoconductive film 40.
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