| 摘要 |
PURPOSE:To stabilize an operation and to improve the quality of an image by satisfying a specific relationship among the junction capacitance of a photodiode, the junction capacitance of a coupling diode on the side of a signal processing device and the stray capacitance between a high-concentration diffusion part of the coupling diode and a control electrode of an MIS photogate. CONSTITUTION:A signal processing device contains the following: an MIS signal- charge storage part corresponding to each sensor of a radiation sensor array 1; a signal-charge injection circuit composed of a diffusion layer connecting this signal-charge storage part to an output terminal of each sensor and of an MIS gate used to transfer a signal charge of this diffusion layer to the signal-charge storage part. A relationship as shown in the formula is to be satisfied when the junction capacitance of each p-n junction of the sensor array 1 is designated as CD, the junction capacitance between the diffusion layer of the signal-charge injection circuit and a substrate of the signal processing device is designated as CS, and the electrostatic capacitance between the diffusion layer and a control electrode of an MIS gate is designated as Cgs. By this setup, it is possible to stabilize an operation and to improve the quality of in image.
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