| 摘要 |
PURPOSE:To eliminate poor bonding for the production of a highly reliable semiconductor device by a method wherein, prior to the bonding of a semiconductor chip to a substrate, thin oxide films and other contaminants are removed from the semiconductor chip pad surface by using a plasma etching unit and its accessories, or by using an etchant such as hydrofluoric acid. CONSTITUTION:In a process of bonding a semiconductor chip after processing and dicing stages for the production of a semiconductor device, and prior to the bonding of the semiconductor chip, a plasma etching unit and its accessories, or an etchant such as hydrofluoric acid, are applied for the removal of thin oxide films or other contaminants from the surface of a pad 1 on the semiconductor chip. Bonding is accomplished only after this contaminant-removing process. For example, a semiconductor chip is installed on a lead frame tab by using a die-bonding agent, the lead frame is placed in a plasma unit, and a thin oxide film on an Al pad 10 is removed by etching. Further, in a cleaning process in O2, contaminants are removed from the surface of the Al pad 10, after which an Au wiring is provided on the Al pad 10. |
