| 摘要 |
PURPOSE:To fine a gate electrode so as to enable the fining of an element, by forming a silicon film on an insulating oxide film with a corner part and next etching the silicon film to remain only on the corner part so that the gate electrode is formed. CONSTITUTION:When a semiconductor device is manufactured on a semiconductor substrate 21 to have an element region inserted into a field oxidizing film, a conductive film 24A is formed on a surface ranging from a conductivity-type region 28A, which is either a source part or a drain one in said element region, to the field oxide film 23 adjacent to this conductivity-type region. Next, an insulating oxide film 25 is formed on a surface ranging from the gate part in said element region to said conductive film 24A part so as to have a corner part put between an approximately horizontal gate oxidizing film 25B and an approximately vertical rising part 25C. In succession, a silicon film 26 is formed on the insulating oxide film 25 and it is etched to remain as a gate electrode 26C only on said corner part.
|
