| 摘要 |
PURPOSE:To enable the low temperature lamp annealing process, by setting the inactive gas pressure of an annealing chamber in the range of 2-15 atm. CONSTITUTION:In the case of annealing process, the lid 4 of an annealing chamber 1A is opened, a semiconductor wafer 5 is mounted on a wafer retainer 3, the lid 4 is closed, and N2 gas is introduced into the annealing chamber 1A from a purge gas source 6. Thus, purging is performed. After that, from a high pressure gas supplying equipment 7, an inactive gas set in the range of 2-15 atm is supplied to the annealing chamber 1A, and annealing is performed by opening an infra-red ray lamp group 2. After the annealing is finished and a specific cooling time is passed, the high pressure gas is discharged, and N2 purging is performed. Then the wafer 5, for which the treatments are finished, is taken out. Thereby, in the process of forming various kinds of semiconductor device, the lamp annealing process for the activation of ion-implanted impurity is enabled at a temperature lower than in the prior arts.
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