| 摘要 |
PURPOSE:To form an AlN layer containing crystallized AlN excellent in various characteristics on the surface layer of an Al material in a short time, by implanting, in vacuum, specific amounts of N ions with a specific energy into the surface of an Al material in which temp. is regulated to a specific value. CONSTITUTION:N ions 10 generated from an ion source 8 are implanted into the surface of an Al material 6 in vacuum to carry out the surface treatment of the Al material 6. At this time, the energy of the above N ions 10 and the amount of the N ions to be implanted are regulated to 5-40keV and 1X10<16>-1X10<18>ion/cm<2>, respectively. Further, the surface temp. of the Al material 6 at this time is maintained at a temp. in a range of 350-550 deg.C by means of a heater 2. By this method, an AlN layer containing crystallized AlN is formed on the surface layer of the above Al material 6, and the Al material 6 having various characteristics of AlN can be effectively obtained.
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