发明名称 BLANK MASK FOR X-RAY LITHOGRAPHY
摘要 PURPOSE:To prepare a blank mask excellent in withstanding shocks and prevent its X-ray transmitting film from distortion attributable to heat by a method wherein a reinforcing material with Young's modulus not higher than a specified value is applied to the rear side of the X-ray transmitting film. CONSTITUTION:In a blank mask for X-ray lithography consisting of an X-ray transmitting film 11 and a supporting element 12 supporting the X-ray transmit ting film 11 on its rear side, the rear side is reinforced with a reinforcing mate rial 13 with its Young's modulus not higher than, 1X10<10>dyn/cm<2>. For example, to the rear side of an X-ray transmitting film 11 that is an approximately 3mum-thick silicon hydride nitride film supported by a supporting element 12 built of silicon, a reinforcing material 13 that is a negative resist is uniformly applied. The reinforcing material 13 is then allowed to adequately dry at 800 deg.C for the completion of a blank mask of this design. This design enhance the shock-withstanding feature and, with the entire thermal capacity increasing in the presence of the reinforcing material 13, the membrane may effectively be prevented from distortion due to heat during a pattern-drawing process.
申请公布号 JPS63289931(A) 申请公布日期 1988.11.28
申请号 JP19870126387 申请日期 1987.05.22
申请人 SHARP CORP 发明人 SHIGA CHIYAKO;IGUCHI KATSUJI;URAI MASAHIKO;KOBA MASAYOSHI
分类号 G03F1/50;G03F1/68;H01L21/027;H01L21/30 主分类号 G03F1/50
代理机构 代理人
主权项
地址