| 摘要 |
PURPOSE:To provide a stabilizing resistor between an emitter and a base without increasing a transistor of this design in size and causing destruction of the transistor due to a parasitic transistor by a method wherein a resistive region constituting a stabilizing resistor is provided under an external lead-out section of a base electrode. CONSTITUTION:A pressure welding single transistor with divided electrodes 16 on a primary surface of a semiconductor substrate is built, where a resistive region 31 constituting a stabilizing resistor R interposed between an emitter 14 and a base 13 is provided. For instance, the said resistive layer 31 is so formed as to be extended long enough to have a required resistance value by making a pair of emitter regions facing each other out of eight emitter regions 14 face toward a central part of an external lead-out section 25 of the base electrode. And, the end of the said resistive layer 31 is made to be short-circuited with the base region 13 using the electrode material of aluminum or the like, thereby the stabilizing resistor R making use of the lateral sheet resistance of the emitter region 14 is formed.
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