| 摘要 |
PURPOSE:To enable implementation of analysis of a semiconductor device sealed with a resin in more details and more accurately as compared with analysis of a semiconductor chip alone, by performing an analysis using a face of the resin in contact with the side where a circuit pattern of a semiconductor chip is located after the interface peeling of the resin covering the chip from the semiconductor chip. CONSTITUTION:After the interfence peeling of a resin B covering a semiconduc tor chip A from the semiconductor chip A, an analysis is performed using a face of the resin B in contact with the side where a circuit pattern 1 of the semiconductor chip A is located. Thereafter, when the circuit pattern 1 is ob served, a corroded area 2 is noted. But the range of the corroded area 2 is too wide to identify a part at which water infiltrate initially. On the other hand, when observed on the side of the resin B, the infiltrated part of water is seen as abnormality 3 appearing in an interference island pattern on the surface of the resin B, indicating an infiltration path of water. Thus, adhesive ness between the semiconductor chip A and the resin B and the flow of the resin B can be estimated from transfer strength of the circuit pattern 1 of the semiconductor chip A onto the resin B.
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