| 摘要 |
PURPOSE:To manufacture a transistor driving large currents by a small area and a short-channel transistor operating at high speed by froming a MOS transistor in the vertical direction onto the side face of an opening section shaped to an epitaxial layer and extracting a source by using a buried layer. CONSTITUTION:Since each source 18, 28 is connected electrically to an N+ type buried layer 15 and a P<+> type buried layer 25 through WSi films 17, 27, supply voltage can be supplied from the buried layers 15, 25 through extracting regions 21, 31. Consequently, a wiring region for feeding power supply is designed freely, thus increasing the density of a semiconductor device and improving the degree of integration thereof. The whole sidewall of an opening section can be utilized as a channel region, thus manufacturing a transistor driving large currents by a small area. Since an N-type diffusion layer 20 and a P-type diffusion layer 30 for elevating punch through voltage are shaped through ion implantation at high voltage, the surface concentration of the layers 20, 30 can be controlled easily, thus preparing a transistor having specified short channel length and specified threshold voltage. |
