| 摘要 |
PURPOSE:To enable an electrode pattern in fine linear width to be formed as designed while facilitating the peeling off of any residual resist after exposure by a method wherein the first positive resist layer is formed on a substrate and after exposing the first layer for shorter time than the proper exposure of the first resist layer, the second resist layer is formed by coating the same positive type resist. CONSTITUTION:The first resist layer 11 is formed by coating positive type resist and then baked. First, the resist layer 11 is exposed by photo 12 for around 0.5 sec. The photo 12 exposes the overall surface of the first resist layer 11 without using a photomask. Second, the surface of the first resist layer 11 is coated with the positive type layer 11 forming the layer 11 and baked to form the second resist layer 13. A specified mask is provided on the layer 13 to be exposed by the photo emitted from the same light source as that emitted the photo 12 for five seconds. In case of the development, the first resist layer 11 is etched away faster so that the section of removed resist may make an inverse mesa shape.
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