| 摘要 |
PURPOSE:To obtain the title high-quality crystal having a stoichiometric composition by charging the group V element in the raw material for vapor growth into a vessel made of B2O3, closing the vessel, placing the vessel in a crucible, successively charging a group III element and B2O3 thereon, and gradually heating the crucible in a reaction vessel to grow a crystal. CONSTITUTION:A group V element 5 (e.g., As) of the periodic table is charged in the vessel 3 made of B2O3 and having the outer diameter almost identical to the inner diameter of the crucible 4, a lid made of B2O3 is hermetically shut, the vessel 3 is then set in the crucible 4, a group III element (e.g., Ga) equivalent to the element 5 is placed thereon, and excess B2O3:1 is charged thereon to keep the thickness of a sealant. The crucible 4 is placed in the reaction vessel 17 of a liq.-sealing Czochralski crystal growth device, the crucible is heated by a heater 13 at a rate of about 20 deg.C/min to the softening temp. (557 deg.C) of B2O3 while pressurizing the vessel with an inert gas to successively melt the element 2 and the B2O3, the surface of the crucible is sealed by the Ba2O3 to prevent the vaporization of the element 5, then the pressure of the inert gas is increased to about 70atm., and the title crystal 16 having the stoichiometric composition is synthesized at about 1,000 deg.C.
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