| 摘要 |
PURPOSE:To increase the current supply capability to a load and to attain high) speed switching by connecting a bipolar NPN transistor (TR) and an N-channel MOS TR between a power supply and a ground point, connecting the emitter of the bipolar element and the drain of the MOS element so as to form an output terminal. CONSTITUTION:In applying a low level voltage to an input terminal 3, the P-channel MOS TR 14 and the NPN TR 11 are turned on, the N-channel MOS TR 12 is turned off and the output reaches a high level. In applying a high level voltage to the input terminal 3, the TRs 14, 11 are turned off, the TR 12 is turned on and the output goes to a low level. The N-channel MOS TR 13 is turned on in this case and the base electric charge of the TR 11 is given to the emitter, then the switching speed of changeover of on/off of the TR 11 is quickened and the current supply capability to the load 15 is increased. |
