| 摘要 |
PURPOSE:To improve electron mobility, and to increase working speed by crossing and disposing a gate electrode controlling an electron gas generated near a region, in which an impurity reaches only to the second semiconductor layer side on the interface of a hetero-junction, in the direction of stripe. CONSTITUTION:Both an Al0.3Ga0.7As layer 2 and a GaAs layer 3 are epitaxial-grown onto a semi-insulating GaAs substrate 1 in a non-doping manner. A mask 11 in which a large number of striped patterns are formed in a region in which a channel is shaped is formed onto the semiconductor base body by using SiO2, etc. on the layer 3. Ions such as silicon (Si) ions are implanted, and Si ions are activated and diffused through heating. Consequently, the N-type regions, into which Si is doped, of 4a in the GaAs layer 3 and 4b in the AlGaAs layer are formed. The N-type regions 4a, 4b into which Si is introduced are also shaped in ohmic contact forming regions. Sections not coated with the mask 11 in the Si introducing regions in the GaAs layer 3 and the AlGaAs layer 2 are removed regarding at least the channel forming region, and layers such as non-doped GaAs layer 5 are buried and grown in the sections. The N-type regions 4a, 4b are left regarding the ohmic contact forming regions. A gate electrode 7 is arranged crossed in the direction of stripe of a channel region shaped through said process.
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