| 摘要 |
PURPOSE:To easily measure the energy gap of a semiconductor thin film by a simple and low-cost constitution by a method wherein, with incident light incided in the surface of the semiconductor thin film, its wavelength is continuously changed and the intensity of reflected light from the semiconductor thin film is measured. CONSTITUTION:In case the energy gap of a semiconductor thin film 2, which is formed on a semiconductor substrate 1 consisting of GaAs and consists of AlxGa1-xAs, is measured, light from a tungsten lamp 3 is projected to the thin film 2 on the substrate 1 through a spectroscope 4, the wavelength of the incident light incided by the spectroscope 4 is continuously increased or reduced within a range of 600-1000 [nm] and the intensity of reflected light from the thin film 2 is measured by a photodetector 5. In such a way, the energy gap of the semiconductor thin film can be easily measured by a simple and low-cost constitution.
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