| 摘要 |
PURPOSE:To control a dryetching device for performing the optimum etching process meeting the requirements (pressure, gas flow rate, high-frequency voltage) for the optimum etching state by constantly detecting and analyzing the plasmic light intensity during etching process. CONSTITUTION:An etching chamber 1 is vacuumized by a vacuum pump 3 while feeding the chamber 1 with gas from a gas flow rate controller 2, and in such a state, the space between a semiconductor substrate table 5 (anode) and an upper electrode 6 (cathode) is impressed with high-frequency voltage from a high-frequency power supply 4 to change the gas between than into plasmic state for etching the surface of semiconductor substrate 7. During the etching process, the plasmic light intensity in the etching chamber 1 is detected by a plasmic light intensity detector 8 through a peep hole 8 provided outside the etching chamber 1; the data in the detector 9 are analyzed by a plasmic light intensity analyzer 10 to compare the data with those in the optimum etching state; and then control signals 12 are transmitted to the vacuum pump 3, the high-frequency power supply 4 and the gas flow rate controller 2 from another controller 11 to keep the etching chamber 1 in the optimum etching state.
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