| 摘要 |
PURPOSE:To ensure high reliability up to high-output operation, and to enable stable fundamental transverse mode oscillation and single longitudinal mode oscillation having excellent yield by arranging sixth semiconductor layers consisting of a II-VI compound semiconductor having a refractive index smaller than a fifth semiconductor layer, forbidden band width larger than the fifth semiconductor layer and resistance higher than the fifth semiconductor layer at both ends of the fifth semiconductor layer. CONSTITUTION:A buffer layer 102, a clad layer 103, an active layer 104, an optical guide layer 105, a clad layer 106 and a cap layer 107 are formed onto a substrate 101 in succession, and SiO2 111 is deposited. SiO2 is etched so as to be left to a striped shape that it is extended in the <OFF> direction of the substrate 101, and residual SiO2 is used as a mask for selective etching and the layers 106, 107 are etched on its midway of the clad layer 106. When the surface of the optical guide layer 105 is exposed, etching can be stopped easily. The selective buried growth of an undoped ZnSe layer 108 is conducted. Stable oscillation is enabled up to an output higher than the semiconductor laser having no optical guide layer in the semiconductor layer.
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