| 摘要 |
PURPOSE:To form zinc selenide single crystal at temp. of a substrate keeping up low temp. of about 200 deg.C by making any one of the amount of the molecular beam of zinc and selenium constant and continuously increasing the other beam in the molecular beam epitaxial growth of zinc selenide single crystal. CONSTITUTION:Zinc selenide single crystal is formed on the substrate of a semiconductor by projecting the molecular beams of zinc and the molecular beams of selenium on the above-mentioned substrate. In this case, the temp. of the substrate is held at about 200 deg.C and any one of the amount of the molecular beam of zinc and the amount of the molecular beam of selenium is made constant and the other beam is continuously increased.
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