| 摘要 |
PURPOSE:To prevent the metal of a wiring pattern from scattering at the time of fusing, from moving from a prescribed position by surface tension and from cohering to swell by a method wherein an insulating film on metal wiring films is fixed by suppressing the wiring pattern from its upper surface and a tunnel, through which a wiring passes, is formed. CONSTITUTION:An SiO2 insulating film 3 is adhered on a semiconductor substrate 1 comprising functional elements 2 constituted therein and thereafter, prescribed patterns are each formed on contact regions by a lithography technique. Al is adhered on the whole surface of the substrate 1, whereon contact holes 4 are opened, using a bias sputtering method and so on and after that, a wiring pattern is formed by a lithography technique. A form maintaining film 6, with which Al wiring films 4 are covered and which consists of SiO2, is adhered on the whole surface of the substrate 1 by a sputtering method and so on and the adhered forms of the films 5 are changed to remove the contact holes 4 in regions where are wanted to flatten and the film 6 on other step part. When the substrate 1 is heated at the melting point, 660 deg.C, or more of the films 5 using infrared rays or a laser beam and so on, the Al is instantaneously changed into a liquid phase state from a solid phase state, flows in a contact hole 3 and the surface is flattened.
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