METHOD OF FORMING BIPOLAR TRANSISTOR WITH CLOSE DEVICE REGIONS,申请号JP19880112313-传众专利搜索

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发明名称	METHOD OF FORMING BIPOLAR TRANSISTOR WITH CLOSE DEVICE REGIONS
摘要
申请公布号	JPS63287061(A)	申请公布日期	1988.11.24
申请号	JP19880112313	申请日期	1988.05.09
申请人	RAYTHEON CO	发明人	UORUFUGANGU EMU FUIISUTO
分类号	H01L27/06;H01L21/331;H01L21/336;H01L21/8249;H01L29/08;H01L29/73;H01L29/732	主分类号	H01L27/06
代理机构		代理人
主权项
地址

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