| 摘要 |
PURPOSE:To enable operation of the title laser at a high oscillation efficincy, a low threshold value current and high output, by utilizing the surface azimuth dependence of a liquid phase epitaxial growth (LPE) method for selectively forming a current block layer on the surface except a groove. CONSTITUTION:An n-type InP current block layer 3, a GaInAsP buffer layer 4, a p-type InP clad layer 5, a GaInAsP active layer 6 and an n-type InP protective layer 7 are formed by turns on a p-type InP substrate 1 provided with a groove by an LPE method. Thereby, the layer 3 does not grow in the inside of the groove due to the surface azimuth dependence of the LPE method. The layer 4 has only a little surface azimuth dependency so as to grow in the inside of the groove and the layers after the layer 5 grow also thereon. Later, an inverse mesa type stripe is formed by etching, while n-type and p-type InP current stricture layers 10, 11 are made to grow by the LPE method. When this laser operated, an interface of the layers 3, 4 and the layers 10, 11 becomes an inverse bias, the current does not flow in the part of a grating to be an outer waveguide path. Accordingly, an operation of a good oscillation efficiency, a low threshold value current and a high output can be per-formed. |
