| 摘要 |
PURPOSE:To increase a photoelectric conversion efficiency, by making a contact region of an electrode collecting a small number of carriers and a semiconductor finger-shaped for increasing a contact area with the electrode surface. CONSTITUTION:The surface of a p-type semiconductor layer 11 and its back are oxidized to form oxide films 10 and 9. A resist mask is formed on the oxide film 9 on the back and having this as a mask, a finger-shaped groove for forming n<+>-type semiconductor regions 5 and the holes for forming p<+>-type semiconductor regions 6 are opened. Further, P and BF2 ions are implanted into the respective holes for forming conductors in order to form the regions n<+> and p <+>. Subsequently, heat treatment is performed for activation to form the regions 5 and 6. Next, composite finger-shaped electrodes of Ti/Ag are formed in the regions 5 and 6, while forming a reflection preventive film 10 on the light incident surface of the back. Thereby, the collection and the taking-in of a small number of carriers from a bulk semiconductor layer to the pn junction regions are effectively performed so as to increase the photoelectric conversion efficiency. |
