| 摘要 |
PURPOSE:To minimize crystal defects and to obtain III-V compound semiconductor thin films characterized by excellent stability in quality, by forming the gas-flow straightener part of a vapor growth apparatus for compound semiconductor thin films with a semiconductor crystal, whose constituent element is a group V element. CONSTITUTION:A carrier gas (c) is introduced through an introducing port 5 of a lateral reaction tube 10 of a thin film vapor growth apparatus. Cooling water (b) is made to flow through a water cooling jacket 2. A GaAs single crystal plate 8 is heated with a high frequency induction coil 3. The mixed gas of a raw material gas and a carrier gas is supplied from the gas introducing port 5. GaAs is grown on the substrate 8. When a vertical reaction tube 10 is used in this apparatus, a high frequency coil 3 is arranged on the outer surface of a water cooling jacket 2, which is provided on the outer surface of the reaction tube 10. A gas-flow straightener part 9 and a crystal growing part 7 are vertically supported with a supporting shaft 11, which is provided in the reaction tube 10. The straightener part 9 is formed from a GaAs single crystal ingot. The growing part 7 is formed by machining of carbon. The surface of each substrate 8 is made to be the same plane with the surface of the growing part 7.
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