| 摘要 |
PURPOSE:To form a thin film having superior adhesion and denseness on a substrate at a low temp. by forming a thin film on the surface of the substrate by chemical vapor growth and by radiating ion beams on the surface of the substrate during the film formation. CONSTITUTION:Microwaves are introduced into the plasma generation chamber 2 of a unit 1 from a waveguide 4 through the quartz window 5 and ions in plasma gas from an introduction pipe 6 are extracted into the film formation chamber 3 by a magnetic field from an excitation coil 10. In the chamber 3, the ions are reacted with a reactive gas introduced from an introduction pipe 11 on a substrate 21 to form a film. An ion source gas is introduced into a hot cathode filament 14 from an introduction pipe 15 and ionized with electrons emitted from the filament 14 and confined between the filament 14 and the anode 16 by a magnet 17. The ionized gas is converted into ion beams by passing through a leading-out grid 18 and the ion beams are radiated on the substrate 21. By simultaneously carrying out the above- mentioned operations, the ion beams are radiated on the substrate 21 and its vicinity simultaneously with the formation of the film on the surface of the substrate 21. Thus, a thin film having superior adhesion and denseness is formed on the substrate 21 at a low temp. and the quality of the film can be locally exchanged with ease.
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