| 摘要 |
PURPOSE:To omit a gap between wafers and to prevent attachment of Si3N4 to the rear surfaces of the wafers and the warping of the wafers, when the wafers are aligned in the longitudinal direction so that the rear surfaces of the wafers are made to face to each other, by adopting a structure, in which the upper parts of the wafers are fixed. CONSTITUTION:The structure of a susceptor is composed of two parts, i.e., a table 31 and a pushing plate 32. The wafers are aligned in the longitudinal direction so that the rear surfaces of the wafers are made to face to each other. The upper parts of the wafers are fixed with the grooves of the pushing plates 32. In this constitution, since gaps are not formed between the rear surfaces of the wafers, the wafers are not warped in a wave shape when LOCOS is oxidized. When gas of SiH4+NH3 is introduced through an introducing port 1 and an Si3N4 film is formed on the surface of each wafer in a quartz chamber 2, the gas is not turned into the rear surfaces. Therefore, the Si3N4 film is not formed on the rear surfaces.
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