| 摘要 |
PURPOSE:To make the interval between a gate electrode and a source electrode and the interval between the gate electrode and a drain electrode small readily, by determining the interval between the gate and source electrodes and the interval between the gate and drain electrodes with the sizes of insulators. CONSTITUTION:Ohmic electrodes 3 are formed on an N-type GaAs layer 2, which is formed in a GaAs substrate 1. A Si nitride film 4 is deposited on the entire surface. The entire surface is etched, and the Si nitride film 4 is made to remain only on the side surfaces of the electrodes 3. A Schottky electrode 5 is deposited on the entire surface. Photoresist 6 is applied thereon. The entire surface is etched, and the resist 6, the electrodes 5 and 3 and the film 4 are removed by the same degree. Thus a structure, in which the electrodes 5 and the electrodes 3 are isolated with the films 4, is obtained. Then, the Schottky metal, at a part, which is not required for a MESFET, is etched away. Thus, the MESFET, in which the part between a gate electrode and a source electrode and a part between the gate electrode and a drain electrode are isolated with the Si nitride films, is obtained.
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