| 摘要 |
PURPOSE:To measure the operating temperature of a semiconductor device, by arranging a thermocouple, which is formed by laminating different kinds of metals, in the vicinity of an element on the surface of a semiconductor substrate, and measuring the potential difference between the different kinds of metals. CONSTITUTION:A thermocouple 4 is provided in the very close vicinity of a GaAs FET 2. One end of a compensating conductor wire, whose thermocouple characteristics are similar to those of metals 4a and 4b, undergoes thermocompression bonding to each of a pad 5a of one metal 4a of the thermocouple 4 and another pad 5b of the other metal 4b. The other end is connected to a temperature display meter or potential difference meter. When the temperature of the FET 2 is changed, thermoelectromotive force is generated between the metals 4a and 4b by Seebeck effect. The generated thermoelectromotive force is determined by the quality and the temperature of the thermocouple 4. Therefore, the temperature of the vicinity of the GaAs FET 2 can be readily found by measuring the thermoelectromotive force. In the thermocouple 4, platinum is used for the metal 4a and platinum rhodium is used for the metal 4b, and the metals are laminated.
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