| 摘要 |
PURPOSE:To form a rigid carbon excellent in adhesion on a substrate by forming an islandlike crystalline intermediate layer on the substrate and bringing this substrate into contact with the gas which is obtained by exciting a gaseous raw material contg. a gaseous carbon source. CONSTITUTION:A crystalline intermediate layer (Si, Ti, W or the like) is formed in an islandlike state on the surface of a substrate (Si, Al, Fe or the like) by means of resistance heating vapor deposition. At this time, reaction pressure is regulated to about 10<-10>-10<-3>Torr and reaction time is regulated to about 5min or below. Thereafter the gas obtained by exciting a gaseous raw material contg. a gaseous carbon source (methane, acetone, methyl alcohol or the like) is brought into contact with this substrate at the prescribed temp. at about 10<-9>-10<3>Torr reaction pressure. Thereby a diamond-like carbon film or the like excellent in adhesion is formed on the substrate.
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