THIN FILM FORMATION DEVICE

摘要

PURPOSE:To control the crystalline orientation of a formed thin film by providing a mesh electrode for interrupting plasma to the front face of the holder for a substrate and selectively projecting neutral radicals on the substrate. CONSTITUTION:A substrate 10 is fixed on the holder 5 for a substrate and set to a manipulator 11 incorporated in a vacuum chamber 1 at a prescribed angle and the vacuum chamber 1 is exhausted at about 10<-5>-10<-7>Torr degree of vacuum. The gas contg. material elements is introduced into an electrode 2 for generating plasma from cylinders 7 and plasma is generated at about 0.1-10Torr degree of vacuum and the velocity of ions and electrons, etc., is controlled by means of a mesh electrode 3 for controlling plasma. The substrate 10 is heated with a heater 6 and a mesh electrode 4 for interrupting plasma is properly electrified and the electric potential of both this electrode 4 and the tip of the manipulator 11 is regulated to zero volt. Thereby positive ions and electrons are cut and only neutral radicals are advanced toward the substrate 10 and the neutral radicals are selectively projected on the substrate and a thin film in which crystalline orientation is controlled is formed.