| 摘要 |
PURPOSE:To prevent the occurrence of dielectric breakdown and the like in an intermediate insulating film regardless of the presence or absence of irregular parts on a substrate, by forming a rotary applied film on the semiconductor substrate, and forming a capacitor on said rotary applied film. CONSTITUTION:A rotary applied film 6 is applied on a semiconductor substrate 1, on which an irregular part 2 is present in a rotating mode. The film has excellent flatness. The surface is formed flatly and very smoothly regardless of the presence or absence of the irregular part 2 on the surface of the substrate 1. A ground metal film 3 is formed on the film 6. An intermediate insulating film 4 is continuously formed on the film 3. Thereafter, an upper metal film 5 is formed on the film 4. In this way a capacitor having a combined structure of the ground metal film/intermediate film/upper metal film is formed. Since the film 4 is formed uniformly, dielectric breakdown is not caused regardless of the presence or absence of the irregular parts such as defects and dust on the substrate.
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