Integrated high voltage generating system.

摘要

This invention relates to an integrated high voltage generating system provided with a charge pump for raising the input power supply voltage sequentially while transferring the electric charges of capacitors one by one, by serially connecting unit circuits composed of diode elements and capacitors, and supplying clock signals of mutually reverse phases to adjacent capacitors. Source and drain electrodes of MOS transistor are connected between the first power supply output terminal and second power supply output terminal, and the gate electrode of this MOS transistor is connected to the input end of any one of the unit circuit of the charge pump, wherein the voltage of the first power supply output terminal is stepped down depending on the voltage applied to the gate electrode of the MOS transistor, and is delivered to the second power supply output terminal. In this way, since the voltage is not stepped down by using dividing circuit, a potential between input power supply voltage and the first input power supply voltage can be obtained from the second power supply output terminal, without consuming unnecessary current and without causing the chip area to be increased.