Vapor phase photoresist silylation process.

摘要

A process for improved vapor phase silylation of photoresist is disclosed. The process uses silylation materials which either produce a strong base such as dimethylamine upon reaction with a resist film or which contain an improved chemical leaving group such as acetate. The process is effective at temperatures of 135 C and below. Preferred silylation materials are N,N-dimethylaminotrimethylsilane and trimethylsilylacetate.