Semiconductor Laser.

摘要

In a semiconductor laser, a substrate (15) is composed of a semiconductor basement (20) and a semiconductor current-blocking layer (21) on the basement. A straight channel (90) is grooved into the current-blocking-layer to reach the basement. The straight channel (90) has a constant width and is composed of a shallow window-region-channels (95A, 95B) in the vicinity of the cavity mirrors and a deep gain-region-channel (96) in the middle of the laser cavity. A first cladding layer (25) is grown on the substrate (15). A semiconductor active layer (26) is grown on the first cladding layer (25). A second cladding layer (27) is grown on the active layer (26). A semiconductor ohmic contact layer (28) is grown on the second cladding layer (27). A pair of electrodes (29, 30) is deposited on each of the upper and lower surfaces of the semiconductor laser device. A pair of cleaved facets (32A, 32B) is faced toward the direction perpendicular to the channel.