发明名称 MANUFACTURE OF GRAIN BOUNDARY INSULATION TYPE SEMICONDUCTOR CERAMIC CAPACITOR
摘要 PURPOSE:To reduce the dispersion of electrical characteristics, and to form the title capacitor with excellent yield by using a member, in which a dispersing agent is applied to a cavity section having honeycomb structure, as a sheath, filling the upper section of the sheath with semiconductor ceramics so as not to be brought into contact with the dispersing agent and insulating crystal grain boundaries through heat treatment. CONSTITUTION:A member, in which a ZrO2 plate having a honeycomb structure, etc., are dipped into a dispersing-agent mixed liquid and the mixed liquid is applied to the inside of a cavity, is employed as a sheath 1, the upper section of the sheath 1 is filled with semiconductor ceramics 3, and the semiconductor ceramics 3 are thermally treated for four hr at a fixed temperature in atmospheric air. Consequently, an adhesion phenomenon among elements can be prevented, and only the dispersion of electrostatic capacity can be lowered while electrical characteristics are kept at the same level. Accordingly, a grain boundary insulation type semiconductor ceramic capacitor can be shaped with an excellent yield.
申请公布号 JPS63285920(A) 申请公布日期 1988.11.22
申请号 JP19870120437 申请日期 1987.05.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMADA YUICHI;IINO TAKESHI
分类号 H01G4/12 主分类号 H01G4/12
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