| 摘要 |
PURPOSE:To obtain a thermistor material having low resistivity and a high B constant by composing an oxide semiconductor of the sintered mixture of a metallic oxide and respectively containing specific quantities of cobalt, copper, lithium and nickel as metallic elements for the mixture. CONSTITUTION:An oxide semiconductor consists of the sintered mixture of a metallic oxide, and 67.5-97.0 atomic % cobalt, 0.5-4.5 atomic % copper, 2.0-22.0 atomic % lithium and 0.5-6.0 atomic % nickel in total of 100 atomic % are contained as constituent metallic elements for the mixture. According to the constitution, the resistivity of a region 1 surrounded by a solid line in the graph is lowered, thus obtaining the oxide semiconductor for a thermistor having a high B constant. Consequently, a thermistor material having low resistivity, high B constant and a negative resistance temperature coefficient can be realized, response can be improved to a temperature as a sensor, and power can be economized.
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