| 摘要 |
PURPOSE:To obtain an SiC whisker having high purity and quality, by heat- treating an SiC whisker in a nonoxidizing atmosphere excluding nitride vapor or in vacuum and heat-treating the SiC whisker at a specific temperature, thereby decreasing the total oxygen content of the SiC whisker to <=1% in high efficiency. CONSTITUTION:An SiC whisker is heat-treated in a nonoxidizing atmosphere excluding nitride gas (e.g. N2 and NH3) or in vacuum at 1,300-2,000 deg.C, preferably 1,500-1,700 deg.C. An SiC whisker having a total oxygen content of <=1% can be produced by this process. The purified SiC whisker produced by the above process has extremely low content of other impurities as well as oxygen and has high quality and purity.
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