| 摘要 |
PURPOSE:To obtain an apparatus for pulling up silicon single crystal and capable of increasing the crystal growth rate i.e. pulling-up speed of an Si single crystal, by placing a cooling apparatus at a circumference of a path of an Si single crystal pulled up from a crucible device. CONSTITUTION:An Si material 53 is charged into a quartz crucible 54 of a crucible device 50 outside of a pulling-up furnace 20 and the device 50 is inserted into the furnace 20 from the bottom of the furnace. The space in the furnace 20 is evacuated 22 in the direction A to 10-20Torr and an inert gas such as Ar gas is introduced 21 into the furnace in the direction B. A voltage is applied to a heater 30 while rotating the device 50 to heat and melt the material 53 in the crucible 54. A suspended pulling-up wire 55 is inserted into the inner space 61 of a cooling apparatus 60 through a pulling-up hole 21 of the furnace 20 and a seed crystal attached to the lower end of the wire is dipped into the material 53 and slowly pulled up to effect the growth of an Si single crystal 56. Since the single crystal 56 is pulled up through the inner space 61 of the device 60, it is quickly cooled to enable the production of the single crystal in sufficiently high pulling-up speed, i.e. crystal growth rate.
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