发明名称 |
Method of fabricating field-effect transistor utilizing improved gate sidewall spacers |
摘要 |
Gate sidewall spacers are created by a two-step procedure in fabricating a field-effect transistor using a protective material such as silicon nitride to prevent gate-electrode oxidation. In the first step, a layer (32) of insulating material is conformally deposited and then substantially removed except for small spacer portions (34) adjoining the sidewalls of a doped non-monocrystalline semiconductor layer (20A) destined to become the gate electrode (36). The second step consists of performing an oxidizing heat treatment to increase the thickness of the spacer portions. No significant gate dielectric encroachment occurs. Also, the spacers achieve a profile that substantially avoids electrical shorts.
|
申请公布号 |
US4786609(A) |
申请公布日期 |
1988.11.22 |
申请号 |
US19870104187 |
申请日期 |
1987.10.05 |
申请人 |
NORTH AMERICAN PHILIPS CORPORATION, SIGNETICS DIVISION |
发明人 |
CHEN, TEH-YI J. |
分类号 |
H01L21/033;H01L21/265;H01L21/266;H01L21/28;H01L21/321;H01L21/336;H01L29/417;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/033 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|