| 摘要 |
PURPOSE:To increase the thickness of film on plural substrates, by forming a temperature gradient having lower temperature at the substrate side than the temperature at the growth solution side in a liquid epitaxial growth using a dip method. CONSTITUTION:Substrates 1 are vertically held with a substrate holder 3 in a horizontal epitaxial growth furnace 9. Separately, a growth solution 2 is put into a solution holder 4 and a shutter 6 is opened to drop the growth solution 2 into the substrate holder 3 and to contact the growth solution 2 with the growing surface of the substrate 1. A heater placed at the left side of the substrate holder 3 is cooled at a prescribed cooling rate to form a specific temperature gradient in the growth solution 2. Therefore, the temperature of the whole solution is decreased at a prescribed rate over a prescribed period and a shutter 7 is opened to drop the growth solution 2 into a solution-receiving part 5 placed under the shutter.
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