发明名称 MONOLITHIC MICROWAVE EQUIPMENT
摘要 PURPOSE:To make a defective component into a nondefective component through ease of correction by providing an opening formed by etching and adjusting the electric characteristic to a rear side of a semiconductor substrate placed beneath an optional part of a microstrip line. CONSTITUTION:The opening part 8 having a prescribed size by etching is formed to the rear side of the semiconductor substrate 1 placed beneath the optional microstrip line 7 in the rear side etching process. In providing the opening part 8 to the rear side of the semiconductor substrate 1 placed beneath the microstrip line 7, the impedance of the microstrip line 7 is changed. Thus, the size of the opening part 8 is adjusted in response to the result of evaluation of the FET evaluation process for monitor to correct the electric characteristic easily. Thus, the component is corrected into a nondefective correction through easy correction and cost-down is attained by the processing above.
申请公布号 JPS63285001(A) 申请公布日期 1988.11.22
申请号 JP19870122055 申请日期 1987.05.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAKAMURA TAEKO;YOSHII YASUSHI
分类号 H01L23/52;H01L21/3205;H01L21/338;H01L21/822;H01L27/04;H01L29/80;H01L29/812;H01P3/08;H01P5/02;H01P5/04 主分类号 H01L23/52
代理机构 代理人
主权项
地址