| 摘要 |
PURPOSE:To reduce a leakage current and improve the light emission efficiency by forming a mesa part through a mesa etching and by causing a crystal layer in which the mesa part is embedded to grow. CONSTITUTION:A protecting mask 10 is mounted on a semiconductor substrate 1 and an etching is carried out so that a lower layer coated with the protecting film mask 10 may remains in a mesa part having a prescribed height and further, an inclined plane B having prescribed crystal planes at base end planes of the mesa part is formed and simultaneously, eaves having a prescribed width are formed at the protecting film mask 10 by etching the sides of mesa. And then, semiconductor crystal layers 19 grow so as to embed the mesa part and make the surface flat. In this way, even though this device makes the height of the mesa part higher, the semiconductor layer for embedding the mesa part grows satisfactorily and a leakage current decreases and further other excellence is obtained. Thus, the above properties improve the performance of the semiconductor device.
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