| 摘要 |
PURPOSE:To upgrade integrity and high-speed performance, by making an area of an electrode contact window, disposed on an n-type impurity region with low-voltage application thereto, larger than areas of the other electrode contact windows. CONSTITUTION:An area of an electrode contact window, disposed on an n-type impurity region with low voltage application thereto, is made larger than respective areas of a window disposed on the n-type impurity region with high voltage application thereto, a window disposed on a p-type impurity region, and windows disposed on a conductive film except for a single-crystal silicon layer. For example when a high voltage is applied to an aluminium electrode 60 with a small contact window 70, p<+> n<+> forward voltage application makes conduction possible even if a p<+> type silicon layer provided with epitaxy is formed over a contact surface of an n<+> type impurity region 2 and the electrode. Even if an area of the electrode contact window is made smaller, no effect is exerted on operation characteristics so that integrity and high-speed performance can be upgraded.
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