| 摘要 |
PURPOSE:To obtain oxide semiconductor for a thermistor with a low specific resistivity, a high B-constant and a negative resistance-temperature coefficient by a method wherein the oxide semiconductor is made of the sintered mixture of metal oxides composed of the respective specific contents of cobalt, copper, lithium and zinc. CONSTITUTION:Oxide semiconductor for a thermistor is made of the sintered mixture of metal oxides and contains 77.0-97.0atom.% of cobalt, 0.5-4.0atom.% of copper, 2.0-18.0atom.% of lithium and 0.5-11.0atom.% of zinc which are totaled into 100atom.% as metal elements of the oxides. The mixture is subjected to wet blending by a ball mill and its slurry is dried and calcined. The calcined slurry is again subjected to wet grinding and blending by the ball mill. The obtained slurry is dried and polyvinylalcohol is added as binder and the mixture is blended. The necessary quantity of the mixture is taken out and compressed and molded into a disc shape. A number of such molded products are formed and baked in the atmosphere of flowing nitrogen. With this constitution, the material for a thermistor with a low specific resistance and a high B-constant can be obtained.
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