MANUFACTURE OF INTEGRATED CIRCUIT

摘要

PURPOSE:To easily manage steps by forming in advance positions disposed under small holes of wirings under an insulating film of a plurality of conductive layers having different colors, and so etching the holes as to penetrate the film to expose the lower side of the conductive layers. CONSTITUTION:A lower conductive layer 21 is formed by depositing NiCr on a glass substrate 1, and then retaining only the positions of contact small holes TH insularly. After aluminum is then deposited on a glass substrate 1, wirings 2 are formed by etching. Then, an AlTaO film is deposited on the wirings 2 to form an insulating film 3. Then, a resist mask 5 is formed on the film 3, and small holes 51 are formed at places where the holes TH are formed. Subsequently, Ar plasma dry etching is conducted to expose the aluminum of an upper conductive layer 22 on the bottoms of the holes TH. Then, etching is conducted so that the holes TH exposes the layer 21 through dipping in a mixed acid solution. Then, after the mask 5 is removed, aluminum wirings 4 are formed in a predetermined pattern on the film 3. Thus, the management of steps is easily available to improve the yield and reliability.