| 摘要 |
PURPOSE:To alleviate loss and to moderate the increase of a threshold current by deepening the depth of a stripelike groove at the center of a resonator as compared with the vicinity of the end face of the resonator, and disposing an active layer near the end face of the resonator and the active layer at the center of the resonator substantially in the same plane. CONSTITUTION:An N-type GaAs current blocking layer 13, a meltback preventing layer 14 and an oxide preventing layer 15 are sequentially provided, for example, on a substrate 11, such as a P-type GaAs P-type substrate 12. A stripelike groove 17 of shaped section is formed at the center perpendicular to the end face 16 of a resonator made of two parallel surfaces on the substrate 11, and a deep groove 19 in which the stripelike groove 17 is sufficiently deeper than the end face 16 is provided at the center 18 of the resonator. Recesses 20 are formed at both sides of the groove 17 near the end face 16. Further, one side face of the groove 17 is used as one side face, and two protrusion type stripelike mesas 21 having narrower width than the center 18 are formed at both sides of the groove 17 in the vicinity of the end face 16. Thus, loss can be alleviated, and the thicknesses of the light enclosure layers at both sides of the groove can be suitably provided.
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