| 摘要 |
PURPOSE:To relax the special conditions of manufacture such as a high temperature, high pressure, the high degree of vacuum, etc., while facilitating industrialization by introducing monosilane gas, germanium tetrachloride and a P-type or N-type doping gas into a reaction vessel and depositing an silicon-germanium alloy onto a heated base body. CONSTITUTION:A base body 31 is set to a reaction vessel 32, and the inside of the reaction vessel is evacuated by a vacuum pump 23 prior to growth, replaced with H2, and kept at fixed pressure by a pressure holder 24 and the internal pressure of the reaction vessel is discharged. SiH4 in the same quantity as the initial conditions of growth, a doping gas and GeCl4 as an H2 carrier are flowed through a toxic substance remover 27 from a purging line 50 in parallel during said operation. The base body is supplied with power from a power supply 35, and the temperature of the base body is elevated to a fixed temperature. The base body is controlled at a constant temperature by a pyrometer 34 for controlling a temperature through a peephole 33. H2 is stopped while a raw material gas is introduced into the reaction vessel and the base body is grown. Since a silicon-germanium alloy is not passed through the state of melting at that time, the alloy is not subject to segregation action, thus acquiring a homogeneous silicon-germanium alloy.
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